GaN Power Device Market

GaN Power Device Market applies the most effective of each primary and secondary analysis to weighs upon the competitive landscape and also the outstanding market players expected to dominate GaN Power Device Market place for the forecast 2020– 2025.

The huge entire addressable markets such as industrial systems, power distribution systems, turbines, heavy electrical systems, advanced industrial control systems, heavy machinery, and electromechanical computing/computer systems are among the major reasons for the quicker development of GaN power device market.

Scope of The Report:

Gallium Nitride (GaN) transistors have developed as an advanced performance option of silicon-supported transistors, due to their capability of fabricating more compact devices for a specific breakdown voltage and resistance value over silicon devices.

By device type, the global GaN power device market is divided into power and RF power. By voltage range, the global GaN power device market is divided into <200 Volt, 200–600 Volt, and >600 Volt. By application, the global GaN power device market is divided into power drivers, supply & inverter, and radio frequency. By vertical, the global GaN power device market is divided into telecommunications, industrial, automotive, renewable, consumer and enterprise, military, defense, and aerospace, and medical.

GaN Power Device Companies:

The major players included in the global GaN power device market forecast are,

• Qorvo
• Cree
• Microsemi Corporation
• MACOM
• Efficient Power Conversion
• Analog Devices
• Transphorm
• Integra Technologies
• Texas Instruments
• Navitas Semiconductor
• Northrop Grumman Corporation
• Sumitomo Electric
• Polyfet
• Qromis
• Sumitomo Electric
• TOSHIBA
• Panasonic
• Mitsubishi Electric
• VisIC Technologies
• GaN Systems
• Infineon
• GaNPower
• Ampleon
• Exagan
• EpiGaN.. 

GaN Power Device Market Key Segments:

   By Device Type:

• GaN Power Discrete Devices
• GaN Power ICs
• GaN Power Modules

   By Industry Vertical Type

• Consumer Electronics
• IT & Telecommunication
• Automotive
• Aerospace & Defense
• Others

Rising Usage Of GaN RF In Millimeter-Wave And Microwave Electronics To Power The Growth In The Market

The GaN Power Device Market for RF power devices had the biggest share. The requirement for high power in the ultrahigh frequency (UHF), very high frequency (VHF), and microwave bands has resulted in the requirement for these devices, which can provide hundreds of watts at RF frequencies up to 10 GHz and more. Most of these machines are created from GaN. Initially designed for IED (improvised explosive device) jammers in Iraq, GaN RF power has surfaced as the tech of choice for all new millimeter-wave and microwave electronics including satellite, radar, electronic warfare, and communications.

The GaN power device market for GaN-supported power devices is predicted to develop significantly during the coming period. This is credited to its properties such as low conduction resistance characteristics and high breakdown voltage that allow high-speed miniaturization and switching. In addition to this, the huge entire addressable markets such as industrial systems, power distribution systems, turbines, heavy electrical systems, advanced industrial control systems, heavy machinery, and electromechanical computing/computer systems, along with different new power applications such as smart grid power systems, high-voltage direct current (HVDC), wind power systems, wind turbines, electric and hybrid electric vehicles, and solar power systems are among the major reasons for its quicker development of GaN power device.

Market by Regional Analysis

North America

• U.S.
• Canada

Europe

• Germany
• France
• U.K.
• Italy
• Spain
• Sweden
• Netherland
• Turkey
• Switzerland
• Belgium
• Rest of Europe

Asia-Pacific

• South Korea
• Japan
• China
• India
• Australia
• Philippines
• Singapore
• Malaysia
• Thailand
• Indonesia
• Rest Of APAC

Latin America

• Mexico
• Colombia
• Brazil
• Argentina
• Peru
• Rest of South America

Middle East and Africa

• Saudi Arabia
• UAE
• Egypt
• South Africa
• Rest Of MEA

Asia Pacific Is Predicted To Have The Biggest Share Of The GaN Power Device Market During The Coming Period

Asia Pacific is predicted to have the biggest share of the GaN power device market during the coming period due to the increasing requirement for power machines in the computing, industrial, automotive and military, telecommunications, and aerospace and defense sectors in emerging Asian nations such as Japan, China, the Philippines, Taiwan, and India. In addition to this, the electric vehicle production and EV charging markets, along with rising renewable energy creation are powering the development of the market in Asia Pacific. Asia Pacific had the biggest share of the global GaN power device market due to the rising requirement for these devices in different applications such as computing, industrial, consumer and enterprise, telecommunications, aerospace and defense, and automotive and military in Asian countries such as Japan, China, the Philippines, Taiwan, and India.

Market by Regional Analysis

North America (USA, Canada, Mexico), Europe (UK, France, Germany, Russia, Rest of Europe), Asia-Pacific (China, South Korea, India, Japan, Rest of Asia-Pacific), LAMEA, Latin America, Middle East, Africa