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GaN Semiconductor Devices Market

GaN Semiconductor Devices Market Size, Share & Trends Analysis Report

GaN Semiconductor Devices Market Size, Share & Trends Analysis Report By Device Type (Opto-Semiconductors, Power Semiconductors, RF Semiconductors), By Wafer Size (2 Inches, 4 Inches, 6 Inches And Above), By Application (Lighting And Lasers, Supplies And Inverters, Radio Frequency, Power Drives, Others), By Component (Transistor, Diode, Rectifier, Power IC, Others), By End-User (Automotive, Consumer Electronics, Defense & Aerospace, Healthcare, Information & Communication Technology, Industrial & Power, Others) Based On Region, And Segment Forecasts, 2021 - 2028

Published
Report ID : BMRC 1801
Number of pages : 300
Published Date : Nov 2022
Category : Semiconductor
Delivery Timeline : 48 hrs

Global GaN Semiconductor Devices Market is valued at USD 19.36 Billion in 2021 and expected to reach USD 28.73 Billion by 2028 with a CAGR of 5.8% over the forecast period.

Global GaN Semiconductor Devices Market Global Size, Trends, Competitive, Historical & Forecast Analysis to 2021-2028, Increasing demand for power electronics which consume less power and are highly efficient & rising usage in automotive and consumer electronics and rising usage in healthcare and communication industry are anticipated to drive the growth of Global GaN Semiconductor Devices Market.

Scope of Global GaN Semiconductor Devices Market Report:

Gallium Nitride (GaN) based semiconductors have dynamic electrical characteristics such as strong thermal conduction, large electric fields, greater saturation velocity, and high breakdown voltage, making them a good fit for a range of switching devices. GaN power semiconductors aid in the reduction of switching and conduction losses, boosting the efficiency of electronic systems and propelling the industry forward. When compared to current Si devices, GaN semiconductors have the potential to operate at higher voltages, temperatures, and switching frequencies while maintaining higher efficiencies.

These qualities not only reduce losses but also allow for a considerable reduction in system volume owing to lower cooling needs and fewer passive components, all of which contribute to lower total system costs. The international rectifier was produced the first gallium nitride power device in 2010. In 2012, the market saw the introduction of the first 6-inch GaN-on-Si Epiwafers. GaN semiconductor devices own their existence to the invention of GaN semiconductors, which are largely utilized in consumer and enterprise electronics, industrial applications, and automobiles.

The ongoing COVID-19 pandemic has forced lockdowns across numerous countries. Therefore, sales of electronics products are confronting restrictions, and supply chains have been disrupted. Moreover, many economies are also suffering from a tremendous revenue loss as shut down of manufacturing units due to the lockdowns. The overall situation has negatively impacted the demand for gallium nitride semiconductor devices in 2020.

Global GaN Semiconductor Devices Market Segmentation:

Global GaN Semiconductor Devices market report is segmented on the basis of function, type, application, end-use, component, wafer size, and region & country level. Based upon type, the global GaN semiconductor devices market is classified into Opto-semiconductors, power semiconductors, and RF semiconductors. Based on wafer size, the market is divided into 2 inches,4 inches, and 6 inches and above. Based upon application, the global GaN semiconductor devices market is divided into lighting and lasers, supplies and inverters, radiofrequency, and power drives. Based on components, the global GaN semiconductor devices market is classified into the transistor, diode, rectifier, and power IC. Based upon end-user, the global GaN semiconductor devices market is classified into automotive, consumer electronics, defense & aerospace, healthcare, information & communication technology, and industrial & power.

By Device Type:

  • Opto-semiconductors
  • Power Semiconductors
  • RF Semiconductors

By Wafer Size:

  • 2 Inches
  • 4 Inches
  • 6 Inches and Above

By Application:

  • Lighting and Lasers
  • Supplies and Inverters
  • Radio Frequency
  • Power Drives
  • Others

By Component:

  • Transistor
  • Diode
  • Rectifier
  • Power IC
  • Others

 By End-User:

  • Automotive
  • Consumer Electronics
  • Defense & Aerospace
  • Healthcare
  • Information & Communication Technology
  • Industrial & Power
  • Others

The regions covered in the global GaN Semiconductor Devices market report are North America, Europe, Asia-Pacific, Latin America, and the Rest of the World. On the basis of country level, the market of global GaN Semiconductor Devices is subdivided into U.S., Mexico, Canada, U.K., France, Germany, Italy, China, India, Japan, South East Asia, Middle East Asia (Saudi Arabia, UAE, Egypt) GCC, Africa, etc.

Gan Semiconductor Companies

Some of the key players for the global GaN Semiconductor Devices market are:

  • Robert Bosch GmbH
  • Raytheon Company
  • Sumitomo Electric Industries, Ltd.
  • Toshiba Corporation, Hitachi, Ltd.
  • STMicroelectronics, Renesas Electronics Corporation
  • Infineon Technologies AG
  • Panasonic Corporation
  • Microchip Technology
  • Mitsubishi Electric Corporation
  • Cree, Inc.
  • NXP Semiconductor
  • ROHM Semiconductors
  • Qorvo Inc.
  • Aethercomm Inc.
  • Analog Devices Inc.
  • others

News: Dutch Semiconductor Maker Nexperia has Teamed Up with China's United Automotive Electronic Systems Company to Develop a New Program to Develop GaN-Based Power Systems for Electric Vehicles

On April 24th, 2021; Nexperia announced a new technology development program focusing on the manufacture of Gallium Nitride (GaN) based semiconductor devices for automotive applications, along with China-based United Automotive Electronics Systems (or UAES). The Netherlands-based, Chinese-owned semiconductor company is known for its high-volume products. United Automotive Electronics Systems (UAES) is China's top automotive parts producer, focusing on powertrain, transmission control, engine management, body electronics, and hybrid and electric drive control systems. The firm is a joint venture between Germany-based Robert Bosch and China's Zhonglian Automotive Electronics Company. Through the new partnership, United Automotive Electronics Systems (UAES) and Nexperia will join forces to develop new automotive systems using GaN technology, which is used to achieve the high energy efficiency required for advanced automotive applications. United Automotive Electronics Systems (UAES) already uses Nexperia's GaN FETs in R&D projects including vehicle-mounted chargers and high-voltage DC-DC converters for EVs.

Its Increased Usage in Automotive and Consumer Electronics and Rising Usage in Healthcare and Communication Industry are Some of the Major Factors Driving the Market Growth

Demand for gallium nitride semiconductor devices in electric vehicle supply equipment such as onboard charging stations and EV charging kiosks has increased. The low switching frequency range of GaN devices makes them suitable for use in GaN-based DC-to-DC converters used in onboard charging stations, which is good for the growth of the market for gallium nitride semiconductor devices. In addition, ongoing research and development activities aimed at adopting GaN devices in electric vehicles are also expected to have a significant impact on market growth. For example; in October 2019, the University of Nagoya launched an electric car that uses entirely gallium nitride semiconductor equipment and named it the All GaN Vehicle. This vehicle is 20% more efficient than current electric vehicles developed using SiC-based equipment. These multi-purpose GaN devices market are expected to grow significantly in the near future.

In addition, GaN's ability to conduct electrons with greater efficiency than silicon is another factor that is supplementing the demand for GaN semiconductor devices in the coming years. Furthermore, the production cost of GaN equipment is much lower than the total production cost of MOSFET equipment; Demand for GaN semiconductor devices is expected to go up during the evaluation period. GaN devices are significantly smaller in size compared to silicon devices; a large number of GaN devices can be manufactured per wafer making them a cheap-effective alternative to silicon.

Moreover, as GaN semiconductor devices have the potential to improve the performance of integrated chips (ICs) and transistors, power design engineers are expected to take advantage of the advantages of GaN technology, including lower switching loss, lower conductance loss, and lower power consumption to operate the circuit., low cost, small device size, and low capacity, among others. The consumption of GaN semiconductors in power conversion systems is projected to achieve new heights within the forecast period, a factor that will considerably improve the global GaN semiconductor equipment market prospects within the stipulated period of the study.

However, rising production costs and increasing the use of traditional silicone materials for production may hinder the market growth. In spite of that, technological advancements in this field may provide more opportunities for the further growth of the market.

The Asia Pacific is Anticipated to Witness Significant Growth in the Global GaN Semiconductor Devices Market

The Asia Pacific is projected to have the largest market share in the market for gallium nitride semiconductor devices in 2026. The rising penetration of GaN power semiconductor devices in many applications such as consumer and enterprise in APAC, telecommunications, automotive, industrial, etc. is one of the major factors driving the market growth in this region. China has the largest share of raw materials for the wide bandgap semiconductor industry in terms of production and distribution. For instance; in early 2020, global automotive companies like Kia Motors, MG, and Toyota invested heavily in developing new manufacturing plants in India. In 2021, domestic as well as foreign automotive companies increased their investment to increase production in India. In addition, the booming telecom industry in the region is expected to open up new market opportunities.

North America is expected to witness significant growth in the global GaN semiconductor due rising growth of telecommunications, aerospace and defense, consumer electronics, automotive, industrial, and other industries in this region. In addition, the presence of leading players also contributes to market growth. Also, the growing demand for consumer electronics products, such as televisions, laptops, gaming devices, personal computers, and tablet PCs, has further boosted the growth of this market in North America.

On Special Requirement GaN semiconductor devices Market Report is also available for below Regions and Country:

North America

  • U.S.
  • Canada

Europe

  • Germany
  • France
  • U.K.
  • Italy
  • Spain
  • Sweden
  • Netherland
  • Turkey
  • Switzerland
  • Belgium
  • Rest of Europe

Asia-Pacific

  • South Korea
  • Japan
  • China
  • India
  • Australia
  • Philippines
  • Singapore
  • Malaysia
  • Thailand
  • Indonesia
  • Rest Of APAC

Latin America

  • Mexico
  • Colombia
  • Brazil
  • Argentina
  • Peru
  • Rest of South America

Middle East and Africa

  • Saudi Arabia
  • UAE
  • Egypt
  • South Africa
  • Rest Of MEA
Report Analysis Details
Historical data 2015 - 2020
Forecast Period 2021 - 2028
Market Size in 2021: USD 19.36 Billion 
Base year considered 2020
Forecast Period CAGR %:

5.8% 

Market Size Expected in 2028: USD 28.73 Billion 
Tables, Charts & Figures: 175
Pages 200
Gan Semiconductor Companies Robert Bosch GmbH, Raytheon Company, Sumitomo Electric Industries, Ltd., Toshiba Corporation, Hitachi, Ltd., STMicroelectronics, Renesas Electronics Corporation, Infineon Technologies AG, Panasonic Corporation, Microchip Technology, Mitsubishi Electric Corporation, Cree, Inc., NXP Semiconductor, ROHM Semiconductors, Qorvo Inc., Aethercomm Inc., Analog Devices Inc., others
Segments Covered By Device Type, By Wafer Size, By Application, By Component, By End-User
Regional Analysis North America, U.S., Mexico, Canada, Europe, UK, France, Germany, Italy, Asia Pacific, China, Japan, India, Southeast Asia, South America, Brazil, Argentina, Columbia, The Middle East and Africa, GCC, Africa, Rest of the Middle East and Africa

Key Benefits of Global Gallium Nitride (GaN) Semiconductor Devices Market Report:

  • Global GaN semiconductor device market report covers in-depth historical and forecasts analysis.
  • Global GaN semiconductor device market research report provides detailed information about Market Introduction, Market Summary, Global market Revenue (Revenue USD), Market Drivers, Market Restraints, Gan Semiconductor Companies, Market Opportunities, Competitive Analysis, Regional and Country Level.
  • Global GaN semiconductor device market report helps to identify opportunities in the marketplace.
  • Global GaN semiconductor device market report covers extensive analysis of emerging trends and competitive landscape.
SUMMARY
VishalSawant
Vishal Sawant
Business Development
vishal@brandessenceresearch.com
+91 8830 254 358
Segmentation
Segments

By Device Type:

  • Opto-semiconductors
  • Power Semiconductors
  • RF Semiconductors

By Wafer Size:

  • 2 Inches
  • 4 Inches
  • 6 Inches and Above

By Application:

  • Lighting and Lasers
  • Supplies and Inverters
  • Radio Frequency
  • Power Drives
  • Others

By Component:

  • Transistor
  • Diode
  • Rectifier
  • Power IC
  • Others

 By End-User:

  • Automotive
  • Consumer Electronics
  • Defense & Aerospace
  • Healthcare
  • Information & Communication Technology
  • Industrial & Power
  • Others
Country
Regions and Country

North America

  • U.S.
  • Canada

Europe

  • Germany
  • France
  • U.K.
  • Italy
  • Spain
  • Sweden
  • Netherlands
  • Turkey
  • Switzerland
  • Belgium
  • Rest of Europe

Asia-Pacific

  • South Korea
  • Japan
  • China
  • India
  • Australia
  • Philippines
  • Singapore
  • Malaysia
  • Thailand
  • Indonesia
  • Rest of APAC

Latin America

  • Mexico
  • Colombia
  • Brazil
  • Argentina
  • Peru
  • Rest of South America

Middle East and Africa

  • Saudi Arabia
  • UAE
  • Egypt
  • South Africa
  • Rest of MEA
Company
Key Players
  • Robert Bosch GmbH
  • Raytheon Company
  • Sumitomo Electric Industries, Ltd.
  • Toshiba Corporation, Hitachi, Ltd.
  • STMicroelectronics, Renesas Electronics Corporation
  • Infineon Technologies AG
  • Panasonic Corporation
  • Microchip Technology
  • Mitsubishi Electric Corporation
  • Cree, Inc.
  • NXP Semiconductor
  • ROHM Semiconductors
  • Qorvo Inc.
  • Aethercomm Inc.
  • Analog Devices Inc.
  • others

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